2011-09-30 1 BFN19 1 2 2 3 pnp silicon high-voltage transistors ? suitable for video output stages in tv sets and switching power supplies ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary types: bfn18 (npn) ? pb-free (rohs compliant) package ? qualified according aec q101 type marking pin configuration package BFN19 dh 1=b 2=c 3=e sot89 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 300 v collector-base voltage v cbo 300 emitter-base voltage v ebo 5 collector current i c 200 ma peak collector current, t p 10 ms i cm 500 base current i b 100 peak base current i bm 200 total power dissipation- t s 130 c p tot 1 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 20 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation)
2011-09-30 2 BFN19 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 300 - - v collector-base breakdown voltage i c = 100 a, i e = 0 v (br)cbo 300 - - emitter-base breakdown voltage i e = 100 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 250 v, i e = 0 v cb = 250 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 20 a emitter-base cutoff current v eb = 5 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v h fe 25 40 30 - - - - - - - collector-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v cesat - - 0.5 v base emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v besat - - 0.9 ac characteristics transition frequency i c = 20 mhz, v ce = 10 v, f = 20 mhz f t - 100 - mhz collector-base capacitance v cb = 30 v, f = 1 mhz c cb - 2.5 - pf 1 pulse test: t < 300s; d < 2%
2011-09-30 3 BFN19 dc current gain h fe = ? ( i c ) v ce = 10 v ehp00592 bfn 17/19 10 10 ma h c 10 5 fe 10 3 1 10 0 5 10 10 10 -1 0 1 2 3 5 10 2 555 2 operating range i c = ? ( v ceo ) t a = 25c, d = 0 10 0 10 1 10 2 10 3 -1 10 0 10 1 10 2 10 3 10 10 s 100 s 1 ms dc collector current i c = ? ( v be ) v ce = 10v ehp00589 bfn 17/19 10 0 v be 1.5 ma c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v 5 10 2 collector cutoff current i cbo = ? ( t a ) v cbo = 200 v ehp00591 bfn 17/19 10 0 ?c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t max typ 5 10 3
2011-09-30 4 BFN19 transition frequency f t = ? ( i c ) v ce = 10 v ehp00590 bfn 17/19 10 10 10 ma f c 10 mhz 10 t 555 0123 10 3 2 10 1 5 collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb 0 10 20 30 40 50 60 70 pf 90 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 0.2 0.4 0.6 0.8 w 1.2 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00588 bfn 17/19 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
2011-09-30 5 BFN19 package sot89 reel ?180 mm = 1.000 pieces/reel reel ?330 mm = 4.000 pieces/reel package outline foot print marking layout (example) standard packing 0.8 0.8 2.0 1.0 1.2 2.5 0.7 0.45 +0.2 1) ejector pin markings possible 1.5 3 0.2 -0.1 b 0.25 1) 0.05 45? 0.15 2.5 0.1 4 0.25 m b b 0.15 0.1 0.35 0.2 1 max. 10? 1.5 0.1 0.2 1.6 -0.15 +0.1 2.75 0.1 4.5 0.1 1 x3 0.2 max. 1) 123 8 0.2 4.3 1.6 4.6 12 pin 1 2005, june date code (ym) baw78d type code pin 1 manufacturer
2011-09-30 6 BFN19 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
